The Microcircuit,memory, cataloged under National Stock Number 5962-01-296-6836, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-296-6836 |
| Primary Part Number | 46225-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Body Length | 0.960 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | ROM |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 18 PRINTED CIRCUIT |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Case Outline Source and Designator | D-6 MIL-M-38510 |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Maximum Power Dissipation Rating | 950.0 MILLIWATTS |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR |
| Input Circuit Pattern | 12 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 007 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 46225-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 722922-51 | Raytheon Company Div Rmd Strategic (USA) |
| M38510/20910BVA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-296-6836 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-296-6836 has 4 cross-referenced part numbers: ROM/PROM FAMILY 007 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 46225-2 (Raytheon Company Div Rmd Strategic), 722922-51 (Raytheon Company Div Rmd Strategic), M38510/20910BVA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 12 known substitutes for 5962-01-296-6836: 3120-00-956-0288, 5962-01-277-4557, 5962-01-294-0104 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 46225-2: Body Length: 0.960 INCHES MAXIMUM IN; Inclosure Material: CERAMIC; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC. 19 total characteristics are documented in the Federal Logistics Information System.