The Microcircuit,memory, cataloged under National Stock Number 5962-01-297-0865, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-297-0865 |
| Primary Part Number | 46303-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.960 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Memory Capacity | UNKNOWN |
| Terminal Type and Quantity | 18 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Case Outline Source and Designator | D-6 MIL-M-38510 |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Inclosure Material | CERAMIC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT AND SCHOTTKY |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Input Circuit Pattern | 12 INPUT |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722922-1 | Raytheon Company Div Rmd Strategic (USA) |
| 722922-51 | Raytheon Company Div Rmd Strategic (USA) |
| 46303-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| HM1-7685-2 | Renesas Electronics America Inc (USA) |
NSN 5962-01-297-0865 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-297-0865 has 5 cross-referenced part numbers: 722922-1 (Raytheon Company Div Rmd Strategic), 722922-51 (Raytheon Company Div Rmd Strategic), 46303-2 (Raytheon Company Div Rmd Strategic), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), HM1-7685-2 (Renesas Electronics America Inc).
There are 6 known substitutes for 5962-01-297-0865: 5962-01-156-1548, 5962-01-296-6836, 5962-01-296-7598 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 46303-2: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Body Length: 0.960 INCHES MAXIMUM IN; Inclosure Configuration: DUAL-IN-LINE; Memory Device Type: ROM. 18 total characteristics are documented in the Federal Logistics Information System.