PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

46239-2Microcircuit,memory

Raytheon Company Div Rmd Strategic · NSN 5962-01-297-0863 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-297-0863 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-297-0863. Primary manufacturer part number: 46239-2.
Features
  • Microcircuit,memory — FSC 5962
  • Input Circuit Pattern: 12 INPUT
  • Time Rating Per Chacteristic: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
  • Memory Capacity: UNKNOWN
  • Memory Device Type: ROM
  • Voltage Rating and Type Per Characteristic: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
  • Case Outline Source and Designator: D-6 MIL-M-38510
  • Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-297-0863, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 7 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-297-0863
Primary Part Number46239-2
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Div Rmd Strategic
StatusACTIVE
Input Circuit Pattern12 INPUT
Time Rating Per Chacteristic80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Memory CapacityUNKNOWN
Memory Device TypeROM
Voltage Rating and Type Per Characteristic-0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Case Outline Source and DesignatorD-6 MIL-M-38510
Test Data Document96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
Terminal Type and Quantity18 PRINTED CIRCUIT
Terminal Surface TreatmentSOLDER
Body Length0.960 INCHES MAXIMUM IN
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Body Width0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Inclosure ConfigurationDUAL-IN-LINE
Features ProvidedHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT AND SCHOTTKY
Inclosure MaterialCERAMIC
Body Height0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 7
5961-00-245-5547 INTERCHANGEABLE
Semiconductor Device,diode
5962-01-156-1548 INTERCHANGEABLE
Microcircuit,memory
7025-01-156-6795 INTERCHANGEABLE
Pulse Disk
5962-01-296-683646225-2 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-296-759846304-2 INTERCHANGEABLE
Microcircuit,digital
Raytheon Company Div Rmd Strategic
5962-01-297-086446240-2 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-297-086546303-2 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
Cross-Reference Index
Part NumberManufacturer
722922-1 Raytheon Company Div Rmd Strategic (USA)
46239-2 PRIMARY Raytheon Company Div Rmd Strategic (USA)
722922-51 Raytheon Company Div Rmd Strategic (USA)
HM1-7685-2 Renesas Electronics America Inc (USA)
ROM/PROM Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
Related Parts
5961-00-245-5547INTERCHANGEABLE
SEMICONDUCTOR DEVICE,DIODE
5962-01-156-1548INTERCHANGEABLE
MICROCIRCUIT,MEMORY
7025-01-156-6795INTERCHANGEABLE
PULSE DISK
5962-01-296-6836INTERCHANGEABLE
MICROCIRCUIT,MEMORY
46225-2
5962-01-296-7598INTERCHANGEABLE
MICROCIRCUIT,DIGITAL
46304-2
5962-01-297-0864INTERCHANGEABLE
MICROCIRCUIT,MEMORY
46240-2
5962-01-297-0865INTERCHANGEABLE
MICROCIRCUIT,MEMORY
46303-2

Frequently Asked Questions

What is NSN 5962-01-297-0863?

NSN 5962-01-297-0863 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-297-0863?

NSN 5962-01-297-0863 has 5 cross-referenced part numbers: 722922-1 (Raytheon Company Div Rmd Strategic), 46239-2 (Raytheon Company Div Rmd Strategic), 722922-51 (Raytheon Company Div Rmd Strategic), HM1-7685-2 (Renesas Electronics America Inc), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).

What NSN replaces 5962-01-297-0863?

There are 7 known substitutes for 5962-01-297-0863: 5961-00-245-5547, 5962-01-156-1548, 7025-01-156-6795 and 4 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 46239-2?

Key specifications for 46239-2: Input Circuit Pattern: 12 INPUT; Time Rating Per Chacteristic: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Memory Capacity: UNKNOWN; Memory Device Type: ROM. 18 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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