The Microcircuit,memory, cataloged under National Stock Number 5962-01-294-0104, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 11 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-294-0104 |
| Primary Part Number | 49863-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/ACTIVE PULL-UP |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-6 MIL-M-38510 |
| Memory Capacity | UNKNOWN |
| Memory Device Type | PROM |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 18 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Maximum Power Dissipation Rating | 950.0 MILLIWATTS |
| Input Circuit Pattern | 12 INPUT |
| Inclosure Material | CERAMIC |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Length | 0.960 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| M38510/20910BVA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 722922-52 | Raytheon Company Div Rmd Strategic (USA) |
| 49863-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-294-0104 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-294-0104 has 4 cross-referenced part numbers: M38510/20910BVA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 722922-52 (Raytheon Company Div Rmd Strategic), 49863-1 (Raytheon Company Div Rmd Strategic), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).
There are 11 known substitutes for 5962-01-294-0104: 5962-01-277-4557, 5962-01-296-6836, 5962-01-301-9834 and 8 more. Verify interchangeability with system specifications before substitution.
Key specifications for 49863-1: Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Features Provided: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/ACTIVE PULL-UP; Terminal Surface Treatment: SOLDER; Case Outline Source and Designator: D-6 MIL-M-38510. 19 total characteristics are documented in the Federal Logistics Information System.