The Microcircuit,memory, cataloged under National Stock Number 5962-01-297-0864, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-297-0864 |
| Primary Part Number | 46240-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 18 PRINTED CIRCUIT |
| Case Outline Source and Designator | D-6 MIL-M-38510 |
| Time Rating Per Chacteristic | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Length | 0.960 INCHES MAXIMUM IN |
| Input Circuit Pattern | 12 INPUT |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT AND SCHOTTKY |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722922-1 | Raytheon Company Div Rmd Strategic (USA) |
| 46240-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| HM1-7685-2 | Renesas Electronics America Inc (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 722922-51 | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-297-0864 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-297-0864 has 5 cross-referenced part numbers: 722922-1 (Raytheon Company Div Rmd Strategic), 46240-2 (Raytheon Company Div Rmd Strategic), HM1-7685-2 (Renesas Electronics America Inc), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722922-51 (Raytheon Company Div Rmd Strategic).
There are 6 known substitutes for 5962-01-297-0864: 4710-00-111-0532, 5962-01-156-1548, 5962-01-296-6836 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 46240-2: Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Memory Capacity: UNKNOWN. 18 total characteristics are documented in the Federal Logistics Information System.