PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

41625Microcircuit,memory

Raytheon Company Div Rmd Strategic · NSN 5962-01-223-3021 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-223-3021 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-223-3021. Primary manufacturer part number: 41625.
Features
  • Microcircuit,memory — FSC 5962
  • Inclosure Material: CERAMIC
  • Terminal Surface Treatment: SOLDER
  • Body Height: 0.200 INCHES NOMINAL IN
  • Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC
  • Bit Quantity: 2048
  • Body Length: 0.785 INCHES MAXIMUM IN
  • Inclosure Configuration: DUAL-IN-LINE
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-223-3021, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-223-3021
Primary Part Number41625
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Div Rmd Strategic
StatusACTIVE
Inclosure MaterialCERAMIC
Terminal Surface TreatmentSOLDER
Body Height0.200 INCHES NOMINAL IN
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Bit Quantity2048
Body Length0.785 INCHES MAXIMUM IN
Inclosure ConfigurationDUAL-IN-LINE
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Word Quantity512
Body Width0.291 INCHES MAXIMUM IN
Memory Device TypeROM
Input Circuit Pattern10 INPUT
Voltage Rating and Type Per Characteristic7.0 VOLTS MAXIMUM POWER SOURCE
Terminal Type and Quantity16 PRINTED CIRCUIT
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Features ProvidedPROGRAMMABLE AND BIPOLAR AND HIGH SPEED
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 12
3455-00-505-023715429 INTERCHANGEABLE
Cutter,milling,end
Brown & Sharpe, Inc. Div Precision Measuring Instruments, Tesa Usa
5930-00-981-668013211E8180 INTERCHANGEABLE
Switch,thermostatic
Cecom Lr Center
5950-01-029-5948PC76269-1 INTERCHANGEABLE
Reactor
Rockwell Collins, Inc. Dba Rc Displays Systems
3030-01-208-9281 INTERCHANGEABLE
Belt,flat
5962-01-223-301241616 INTERCHANGEABLE
Microcircuit,digital
Raytheon Company Div Rmd Strategic
5962-01-223-301341617 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301441618 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301541619 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301641620 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301741621 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
Cross-Reference Index
Part NumberManufacturer
722917-50 Raytheon Company Div Rmd Strategic (USA)
ROM/PROM FAMILY 237 Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
722917-6 Raytheon Company Div Rmd Strategic (USA)
41625 PRIMARY Raytheon Company Div Rmd Strategic (USA)
Related Parts
3455-00-505-0237INTERCHANGEABLE
CUTTER,MILLING,END
15429
5930-00-981-6680INTERCHANGEABLE
SWITCH,THERMOSTATIC
13211E8180
5950-01-029-5948INTERCHANGEABLE
REACTOR
PC76269-1
3030-01-208-9281INTERCHANGEABLE
BELT,FLAT
5962-01-223-3012INTERCHANGEABLE
MICROCIRCUIT,DIGITAL
41616
5962-01-223-3013INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41617
5962-01-223-3014INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41618
5962-01-223-3015INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41619
5962-01-223-3016INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41620
5962-01-223-3017INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41621
5962-01-223-3018INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41622
5962-01-223-3019INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41623

Frequently Asked Questions

What is NSN 5962-01-223-3021?

NSN 5962-01-223-3021 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-223-3021?

NSN 5962-01-223-3021 has 4 cross-referenced part numbers: 722917-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722917-6 (Raytheon Company Div Rmd Strategic), 41625 (Raytheon Company Div Rmd Strategic).

What NSN replaces 5962-01-223-3021?

There are 12 known substitutes for 5962-01-223-3021: 3455-00-505-0237, 5930-00-981-6680, 5950-01-029-5948 and 9 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 41625?

Key specifications for 41625: Inclosure Material: CERAMIC; Terminal Surface Treatment: SOLDER; Body Height: 0.200 INCHES NOMINAL IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC. 16 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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