PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

41621Microcircuit,memory

Raytheon Company Div Rmd Strategic · NSN 5962-01-223-3017 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-223-3017 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-223-3017. Primary manufacturer part number: 41621.
Features
  • Microcircuit,memory — FSC 5962
  • Body Length: 0.785 INCHES MAXIMUM IN
  • Word Quantity: 512
  • Memory Device Type: ROM
  • Terminal Type and Quantity: 16 PRINTED CIRCUIT
  • Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC
  • Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC
  • Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-223-3017, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-223-3017
Primary Part Number41621
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Div Rmd Strategic
StatusACTIVE
Body Length0.785 INCHES MAXIMUM IN
Word Quantity512
Memory Device TypeROM
Terminal Type and Quantity16 PRINTED CIRCUIT
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Terminal Surface TreatmentSOLDER
Features ProvidedPROGRAMMABLE AND BIPOLAR AND HIGH SPEED
Bit Quantity2048
Inclosure ConfigurationDUAL-IN-LINE
Body Width0.291 INCHES MAXIMUM IN
Body Height0.200 INCHES NOMINAL IN
Input Circuit Pattern10 INPUT
Voltage Rating and Type Per Characteristic7.0 VOLTS MAXIMUM POWER SOURCE
Inclosure MaterialCERAMIC
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 12
5905-00-088-8580 INTERCHANGEABLE
Resistor,fixed,wire Wound
5962-01-223-301241616 INTERCHANGEABLE
Microcircuit,digital
Raytheon Company Div Rmd Strategic
5962-01-223-301341617 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301441618 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301541619 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301641620 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301841622 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301941623 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-302041624 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-302141625 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
Cross-Reference Index
Part NumberManufacturer
722917-50 Raytheon Company Div Rmd Strategic (USA)
722917-6 Raytheon Company Div Rmd Strategic (USA)
ROM/PROM FAMILY 237 Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
41621 PRIMARY Raytheon Company Div Rmd Strategic (USA)
Related Parts
5905-00-088-8580INTERCHANGEABLE
RESISTOR,FIXED,WIRE WOUND
5962-01-223-3012INTERCHANGEABLE
MICROCIRCUIT,DIGITAL
41616
5962-01-223-3013INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41617
5962-01-223-3014INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41618
5962-01-223-3015INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41619
5962-01-223-3016INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41620
5962-01-223-3018INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41622
5962-01-223-3019INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41623
5962-01-223-3020INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41624
5962-01-223-3021INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41625
5962-01-223-3026INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41514
5962-01-223-3027INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41583

Frequently Asked Questions

What is NSN 5962-01-223-3017?

NSN 5962-01-223-3017 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-223-3017?

NSN 5962-01-223-3017 has 4 cross-referenced part numbers: 722917-50 (Raytheon Company Div Rmd Strategic), 722917-6 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 41621 (Raytheon Company Div Rmd Strategic).

What NSN replaces 5962-01-223-3017?

There are 12 known substitutes for 5962-01-223-3017: 5905-00-088-8580, 5962-01-223-3012, 5962-01-223-3013 and 9 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 41621?

Key specifications for 41621: Body Length: 0.785 INCHES MAXIMUM IN; Word Quantity: 512; Memory Device Type: ROM; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 16 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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