PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

41619Microcircuit,memory

Raytheon Company Div Rmd Strategic · NSN 5962-01-223-3015 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-223-3015 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-223-3015. Primary manufacturer part number: 41619.
Features
  • Microcircuit,memory — FSC 5962
  • Input Circuit Pattern: 10 INPUT
  • Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE
  • Inclosure Configuration: DUAL-IN-LINE
  • Body Height: 0.200 INCHES NOMINAL IN
  • Word Quantity: 512
  • Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC
  • Inclosure Material: CERAMIC
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-223-3015, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-223-3015
Primary Part Number41619
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Div Rmd Strategic
StatusACTIVE
Input Circuit Pattern10 INPUT
Voltage Rating and Type Per Characteristic7.0 VOLTS MAXIMUM POWER SOURCE
Inclosure ConfigurationDUAL-IN-LINE
Body Height0.200 INCHES NOMINAL IN
Word Quantity512
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Inclosure MaterialCERAMIC
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Body Width0.291 INCHES MAXIMUM IN
Memory Device TypeROM
Features ProvidedPROGRAMMABLE AND BIPOLAR AND HIGH SPEED
Body Length0.785 INCHES MAXIMUM IN
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Bit Quantity2048
Terminal Surface TreatmentSOLDER
Terminal Type and Quantity16 PRINTED CIRCUIT
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 12
1660-00-831-563941619 INTERCHANGEABLE
Network Assy,panel,
Honeywell International, Inc Div Aerospace-Tucson
5962-01-223-301241616 INTERCHANGEABLE
Microcircuit,digital
Raytheon Company Div Rmd Strategic
5962-01-223-301341617 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301441618 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301641620 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301741621 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301841622 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301941623 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-302041624 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-302141625 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
Cross-Reference Index
Part NumberManufacturer
722917-6 Raytheon Company Div Rmd Strategic (USA)
722917-50 Raytheon Company Div Rmd Strategic (USA)
ROM/PROM FAMILY 237 Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
41619 PRIMARY Raytheon Company Div Rmd Strategic (USA)
Related Parts
1660-00-831-5639INTERCHANGEABLE
NETWORK ASSY,PANEL,
41619
5962-01-223-3012INTERCHANGEABLE
MICROCIRCUIT,DIGITAL
41616
5962-01-223-3013INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41617
5962-01-223-3014INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41618
5962-01-223-3016INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41620
5962-01-223-3017INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41621
5962-01-223-3018INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41622
5962-01-223-3019INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41623
5962-01-223-3020INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41624
5962-01-223-3021INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41625
5962-01-223-3026INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41514
5962-01-223-3027INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41583

Frequently Asked Questions

What is NSN 5962-01-223-3015?

NSN 5962-01-223-3015 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-223-3015?

NSN 5962-01-223-3015 has 4 cross-referenced part numbers: 722917-6 (Raytheon Company Div Rmd Strategic), 722917-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 41619 (Raytheon Company Div Rmd Strategic).

What NSN replaces 5962-01-223-3015?

There are 12 known substitutes for 5962-01-223-3015: 1660-00-831-5639, 5962-01-223-3012, 5962-01-223-3013 and 9 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 41619?

Key specifications for 41619: Input Circuit Pattern: 10 INPUT; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE; Inclosure Configuration: DUAL-IN-LINE; Body Height: 0.200 INCHES NOMINAL IN. 16 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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