PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

41620Microcircuit,memory

Raytheon Company Div Rmd Strategic · NSN 5962-01-223-3016 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-223-3016 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-223-3016. Primary manufacturer part number: 41620.
Features
  • Microcircuit,memory — FSC 5962
  • Features Provided: PROGRAMMABLE AND BIPOLAR AND HIGH SPEED
  • Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC
  • Input Circuit Pattern: 10 INPUT
  • Bit Quantity: 2048
  • Terminal Type and Quantity: 16 PRINTED CIRCUIT
  • Body Height: 0.200 INCHES NOMINAL IN
  • Memory Device Type: ROM
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-223-3016, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-223-3016
Primary Part Number41620
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Div Rmd Strategic
StatusACTIVE
Features ProvidedPROGRAMMABLE AND BIPOLAR AND HIGH SPEED
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Input Circuit Pattern10 INPUT
Bit Quantity2048
Terminal Type and Quantity16 PRINTED CIRCUIT
Body Height0.200 INCHES NOMINAL IN
Memory Device TypeROM
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Body Width0.291 INCHES MAXIMUM IN
Inclosure ConfigurationDUAL-IN-LINE
Inclosure MaterialCERAMIC
Terminal Surface TreatmentSOLDER
Voltage Rating and Type Per Characteristic7.0 VOLTS MAXIMUM POWER SOURCE
Word Quantity512
Body Length0.785 INCHES MAXIMUM IN
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 12
3455-00-476-0880 INTERCHANGEABLE
Cutter,milling,end
5950-01-050-3936 INTERCHANGEABLE
Transformer,power
5962-01-223-301241616 INTERCHANGEABLE
Microcircuit,digital
Raytheon Company Div Rmd Strategic
5962-01-223-301341617 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301441618 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301541619 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301741621 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301841622 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-301941623 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-223-302041624 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
Cross-Reference Index
Part NumberManufacturer
722917-50 Raytheon Company Div Rmd Strategic (USA)
722917-6 Raytheon Company Div Rmd Strategic (USA)
ROM/PROM FAMILY 237 Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
41620 PRIMARY Raytheon Company Div Rmd Strategic (USA)
Related Parts
3455-00-476-0880INTERCHANGEABLE
CUTTER,MILLING,END
5950-01-050-3936INTERCHANGEABLE
TRANSFORMER,POWER
5962-01-223-3012INTERCHANGEABLE
MICROCIRCUIT,DIGITAL
41616
5962-01-223-3013INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41617
5962-01-223-3014INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41618
5962-01-223-3015INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41619
5962-01-223-3017INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41621
5962-01-223-3018INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41622
5962-01-223-3019INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41623
5962-01-223-3020INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41624
5962-01-223-3021INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41625
5962-01-223-3026INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41514

Frequently Asked Questions

What is NSN 5962-01-223-3016?

NSN 5962-01-223-3016 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-223-3016?

NSN 5962-01-223-3016 has 4 cross-referenced part numbers: 722917-50 (Raytheon Company Div Rmd Strategic), 722917-6 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 41620 (Raytheon Company Div Rmd Strategic).

What NSN replaces 5962-01-223-3016?

There are 12 known substitutes for 5962-01-223-3016: 3455-00-476-0880, 5950-01-050-3936, 5962-01-223-3012 and 9 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 41620?

Key specifications for 41620: Features Provided: PROGRAMMABLE AND BIPOLAR AND HIGH SPEED; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Input Circuit Pattern: 10 INPUT; Bit Quantity: 2048. 16 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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