VQ1004P: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.320 INCHES MAXIMUM IN, overall_height: 0.360 INCHES MAXIMUM IN, overall_length: 0.786 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: N-CHANNEL MOSFET ARRAY. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-305-3038, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.320 INCHES MAXIMUM IN |
| overall_height | 0.360 INCHES MAXIMUM IN |
| overall_length | 0.786 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| special_features | N-CHANNEL MOSFET ARRAY |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 12 PIN |
| component_name_and_quantity | 2 TRANSISTOR |
| power_rating_per_characteristic | 1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 10.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 0.8 MINIMUM GATE TO SOURCE VOLTAGE AND 2.5 MAXIMUM GATE TO SOURCE VOLTAGE |
| NSN | 5961-01-305-3038 |
| OVERALL HEIGHT | 0.360 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.786 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| OVERALL WIDTH | 0.320 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| MATERIAL | CERAMIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 12 PIN |