VQ1004J — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

VQ1004J: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.320 INCHES MAXIMUM IN, overall_height: 0.360 INCHES MAXIMUM IN, overall_length: 0.786 INCHES MAXIMUM IN, mounting_method: TERMINAL, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-305-3038, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

VQ1004J

NSN: 5961-01-305-3038
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.320 INCHES MAXIMUM IN
overall_height	0.360 INCHES MAXIMUM IN
overall_length	0.786 INCHES MAXIMUM IN
mounting_method	TERMINAL
semiconductor_material	SILICON ALL TRANSISTOR
terminal_type_and_quantity	12 PIN
component_name_and_quantity	2 TRANSISTOR
power_rating_per_characteristic	1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
voltage_rating_in_volts_per_characteristic	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
NSN	5961-01-305-3038

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

•

CURRENT RATING PER CHARACTERISTIC: 460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.360 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.786 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR
OVERALL WIDTH	0.320 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
MATERIAL	CERAMIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	12 PIN

SUBSTITUTES & CROSS-REFERENCES 3

GM820BHH1Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

VQ1004PReference document

Same NSN cross-reference

Reference document — Secondary reference

VQ1004P-2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is VQ1004J?

VQ1004J is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace VQ1004J?

There are 3 known substitutes for VQ1004J: GM820BHH1, VQ1004P, VQ1004P-2. Substitute compatibility should be verified for your specific system.

What is the NSN for VQ1004J?

VQ1004J is cataloged in the U.S. Government catalog under NSN 5961-01-305-3038. This indicates validated use in U.S. government and defense supply chains.

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VQ1004J — SEMICONDUCTOR DEVICES,UNITIZED

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