GM820BHH1 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

GM820BHH1: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.320 INCHES MAXIMUM IN, overall_height: 0.360 INCHES MAXIMUM IN, overall_length: 0.786 INCHES MAXIMUM IN, mounting_method: TERMINAL, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-305-3038, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

GM820BHH1

NSN: 5961-01-305-3038
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 26512 — NORTHROP GRUMMAN SYSTEMS CORPORATION (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.320 INCHES MAXIMUM IN
overall_height	0.360 INCHES MAXIMUM IN
overall_length	0.786 INCHES MAXIMUM IN
mounting_method	TERMINAL
semiconductor_material	SILICON ALL TRANSISTOR
terminal_type_and_quantity	12 PIN
component_name_and_quantity	2 TRANSISTOR
power_rating_per_characteristic	1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
voltage_rating_in_volts_per_characteristic	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
NSN	5961-01-305-3038

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

•

CURRENT RATING PER CHARACTERISTIC: 460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.360 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.786 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR
OVERALL WIDTH	0.320 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	460.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
MATERIAL	CERAMIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	12 PIN

SUBSTITUTES & CROSS-REFERENCES 3

VQ1004JReference document

Same NSN cross-reference

Reference document — Secondary reference

VQ1004PReference document

Same NSN cross-reference

Reference document — Secondary reference

VQ1004P-2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

Ready to buy GM820BHH1?

Compare prices from verified sellers on eBay

Buy on eBay →

As an eBay Partner, PartsTable may earn a commission. Your price is not affected.

FREQUENTLY ASKED QUESTIONS

What is GM820BHH1?

GM820BHH1 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace GM820BHH1?

There are 3 known substitutes for GM820BHH1: VQ1004J, VQ1004P, VQ1004P-2. Substitute compatibility should be verified for your specific system.

What is the NSN for GM820BHH1?

GM820BHH1 is cataloged in the U.S. Government catalog under NSN 5961-01-305-3038. This indicates validated use in U.S. government and defense supply chains.

Community Feedback

GM820BHH1 — SEMICONDUCTOR DEVICES,UNITIZED

Request a Quote — GM820BHH1