S82S123F/883B: RESISTOR,VARIABLE,WIRE WOUND,PRE.
RESISTOR,VARIABLE,WIRE WOUND,PRE. Key specifications include body_width: 0.302 INCHES MAXIMUM IN, body_height: 0.175 INCHES MAXIMUM IN, body_length: 0.785 INCHES MAXIMUM IN, bit_quantity: 256, word_quantity: 32, overall_height: 0.335 INCHES NOMINAL IN. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-027-3791, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.302 INCHES MAXIMUM IN |
| body_height | 0.175 INCHES MAXIMUM IN |
| body_length | 0.785 INCHES MAXIMUM IN |
| bit_quantity | 256 |
| word_quantity | 32 |
| overall_height | 0.335 INCHES NOMINAL IN |
| memory_capacity | UNKNOWN |
| features_provided | BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED |
| output_logic_form | TRANSISTOR-TRANSISTOR LOGIC |
| inclosure_material | CERAMIC |
| memory_device_type | PROM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| NSN | 5962-01-027-3791 |
| INPUT CIRCUIT PATTERN | 6 INPUT |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| BODY WIDTH | 0.294 INCHES MAXIMUM IN |
| BODY HEIGHT | 0.154 INCHES MINIMUM AND 0.179 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/ENABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| MEMORY DEVICE TYPE | ROM |
| BODY LENGTH | 0.808 INCHES MAXIMUM IN |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |