RELEASE5765 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

RELEASE5765: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.375 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-215-5999, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

RELEASE5765

NSN: 5961-00-215-5999
NIINs: 002155999, 009356479
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

overall_length	0.375 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.875 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD AND 1 CASE
specification/standard_data	80131-RELEASE5765 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
internal_junction_configuration	NPN
power_rating_per_characteristic	800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-00-215-5999

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.450 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 2

2N5039Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

921339Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is RELEASE5765?

RELEASE5765 is a TRANSISTOR.

What parts can replace RELEASE5765?

There are 2 known substitutes for RELEASE5765: 2N5039, 921339. Substitute compatibility should be verified for your specific system.

What is the NSN for RELEASE5765?

RELEASE5765 is cataloged in the U.S. Government catalog under NSN 5961-00-215-5999. This indicates validated use in U.S. government and defense supply chains.

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RELEASE5765 — TRANSISTOR

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