2N5039 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5039: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.350 INCHES NOMINAL IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-215-5999, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5039

NSN: 5961-00-215-5999
NIINs: 002155999, 002620729, 003595752, 011501669
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.350 INCHES NOMINAL IN
overall_length	1.573 INCHES MAXIMUM IN
transfer_ratio	20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.875 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 1 CASE
NSN	5961-00-215-5999

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.450 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 2

921339Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

RELEASE5765Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5039?

2N5039 is a TRANSISTOR.

What parts can replace 2N5039?

There are 2 known substitutes for 2N5039: 921339, RELEASE5765. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5039?

2N5039 is cataloged in the U.S. Government catalog under NSN 5961-00-215-5999. This indicates validated use in U.S. government and defense supply chains.

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2N5039 — TRANSISTOR

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