921339 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

921339: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.450 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-215-5999, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

921339

NSN: 5961-00-215-5999
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: K0162 — THALES UK LIMITED SECURE COMMUNICATIONS AND INFORMATION SYSTEMS (GBR)

SPECIFICATIONS

overall_length	0.450 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.875 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD AND 1 CASE
specification/standard_data	80131-RELEASE5765 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
internal_junction_configuration	NPN
power_rating_per_characteristic	140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-00-215-5999

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.450 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 2

2N5039Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

RELEASE5765Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 921339?

921339 is a TRANSISTOR.

What parts can replace 921339?

There are 2 known substitutes for 921339: 2N5039, RELEASE5765. Substitute compatibility should be verified for your specific system.

What is the NSN for 921339?

921339 is cataloged in the U.S. Government catalog under NSN 5961-00-215-5999. This indicates validated use in U.S. government and defense supply chains.

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921339 — TRANSISTOR

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