The Microcircuit,memory, cataloged under National Stock Number 5962-01-303-1468, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 6 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 10 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-303-1468 |
| Primary Part Number | 50013-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Time Rating Per Chacteristic | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Memory Capacity | UNKNOWN |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Input Circuit Pattern | 10 INPUT |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 50013-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 722944-9 | Raytheon Company Div Rmd Strategic (USA) |
| 722944-2 | Raytheon Company Div Rmd Strategic (USA) |
| 722944-50 | Raytheon Company Div Rmd Strategic (USA) |
| 5306-1J/883B | Mmi/amd (USA) |
NSN 5962-01-303-1468 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-303-1468 has 6 cross-referenced part numbers: 50013-1 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722944-9 (Raytheon Company Div Rmd Strategic), 722944-2 (Raytheon Company Div Rmd Strategic), 722944-50 (Raytheon Company Div Rmd Strategic) and 1 more.
There are 10 known substitutes for 5962-01-303-1468: 2920-00-385-1375, 5365-00-726-9093, 5120-00-919-3478 and 7 more. Verify interchangeability with system specifications before substitution.
Key specifications for 50013-1: Inclosure Configuration: DUAL-IN-LINE; Body Height: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Time Rating Per Chacteristic: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 18 total characteristics are documented in the Federal Logistics Information System.