The Microcircuit,memory, cataloged under National Stock Number 5962-01-249-4640, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 7 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-249-4640 |
| Primary Part Number | 1064615-105 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Width | 0.302 INCHES MAXIMUM IN |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Maximum Power Dissipation Rating | 614.4 MILLIWATTS |
| Inclosure Material | CERAMIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Features Provided | BURN IN AND BIPOLAR AND HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Body Height | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 1064615-105 | Raytheon Company (USA) |
| G308302-1 | Raytheon Company Div Corp (USA) |
| HM1-7621-8 | Renesas Electronics America Inc (USA) |
| 1064615-105 | Raytheon Company Div Corp (USA) |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 1064615-105 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| G308302-1 | Raytheon Company Dba Raytheon Co (USA) |
| S82S131F/883B | Philips Semiconductors Inc (USA) |
| 5306-1J/883B | Mmi/amd (USA) |
NSN 5962-01-249-4640 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-249-4640 has 9 cross-referenced part numbers: 1064615-105 (Raytheon Company), G308302-1 (Raytheon Company Div Corp), HM1-7621-8 (Renesas Electronics America Inc), 1064615-105 (Raytheon Company Div Corp), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 4 more.
There are 6 known substitutes for 5962-01-249-4640: 5962-01-249-4637, 5962-01-249-4638, 5962-01-249-4639 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 1064615-105: Inclosure Configuration: DUAL-IN-LINE; Overall Width: 0.300 INCHES MINIMUM AND 0.395 INCHES MAXIMUM IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Body Width: 0.302 INCHES MAXIMUM IN. 18 total characteristics are documented in the Federal Logistics Information System.