The Microcircuit,memory, cataloged under National Stock Number 5962-01-257-3036, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 7 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-257-3036 |
| Primary Part Number | 1064615-104 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Body Height | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Features Provided | BURN IN AND BIPOLAR AND HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Inclosure Material | CERAMIC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Width | 0.302 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 10 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Maximum Power Dissipation Rating | 614.4 MILLIWATTS |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 1064615-104 | Raytheon Company (USA) |
| S82S131F/883B | Philips Semiconductors Inc (USA) |
| G308302-1 | Raytheon Company Div Corp (USA) |
| HM1-7621-8 | Renesas Electronics America Inc (USA) |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 1064615-104 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| G308302-1 | Raytheon Company Dba Raytheon Co (USA) |
| 5306-1J/883B | Mmi/amd (USA) |
| 1064615-104 | Raytheon Company Div Corp (USA) |
NSN 5962-01-257-3036 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-257-3036 has 9 cross-referenced part numbers: 1064615-104 (Raytheon Company), S82S131F/883B (Philips Semiconductors Inc), G308302-1 (Raytheon Company Div Corp), HM1-7621-8 (Renesas Electronics America Inc), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 4 more.
There are 6 known substitutes for 5962-01-257-3036: 5962-01-249-4637, 5962-01-249-4638, 5962-01-249-4639 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 1064615-104: Body Height: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN; Body Length: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN; Features Provided: BURN IN AND BIPOLAR AND HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND 3-STATE OUTPUT; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 18 total characteristics are documented in the Federal Logistics Information System.