The Microcircuit,memory, cataloged under National Stock Number 5962-01-277-3324, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-277-3324 |
| Primary Part Number | 49263-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Memory Device Type | ROM |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Time Rating Per Chacteristic | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Surface Treatment | SOLDER |
| Memory Capacity | UNKNOWN |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 6 INPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Maximum Power Dissipation Rating | 500.0 MILLIWATTS |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Material | CERAMIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 49263-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 013 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 5331-1D/883C | Mmi/amd (USA) |
| 722913-2 | Raytheon Company Div Rmd Strategic (USA) |
| 722913-50 | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-277-3324 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-277-3324 has 5 cross-referenced part numbers: 49263-1 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 013 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 5331-1D/883C (Mmi/amd), 722913-2 (Raytheon Company Div Rmd Strategic), 722913-50 (Raytheon Company Div Rmd Strategic).
There are 5 known substitutes for 5962-01-277-3324: 5962-01-088-8717, 5962-01-106-0879, 5962-01-106-0880 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 49263-1: Body Length: 0.840 INCHES MAXIMUM IN; Memory Device Type: ROM; Case Outline Source and Designator: D-2 MIL-M-38510; Time Rating Per Chacteristic: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 19 total characteristics are documented in the Federal Logistics Information System.