The Microcircuit,memory, cataloged under National Stock Number 5962-01-106-0880, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 8 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-106-0880 |
| Primary Part Number | 43241-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Memory Device Type | ROM |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Maximum Power Dissipation Rating | 500.0 MILLIWATTS |
| Time Rating Per Chacteristic | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS NOMINAL POWER SOURCE |
| Inclosure Material | CERAMIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Input Circuit Pattern | 6 INPUT |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 5331-1D/883C | Mmi/amd (USA) |
| ROM/PROM FAMILY 013 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 43241-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 722913-2 | Raytheon Company Div Rmd Strategic (USA) |
| 722913-50 | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-106-0880 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-106-0880 has 5 cross-referenced part numbers: 5331-1D/883C (Mmi/amd), ROM/PROM FAMILY 013 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 43241-2 (Raytheon Company Div Rmd Strategic), 722913-2 (Raytheon Company Div Rmd Strategic), 722913-50 (Raytheon Company Div Rmd Strategic).
There are 8 known substitutes for 5962-01-106-0880: 4310-00-374-7808, 5315-01-058-5282, 5962-01-088-8717 and 5 more. Verify interchangeability with system specifications before substitution.
Key specifications for 43241-2: Memory Device Type: ROM; Body Width: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Maximum Power Dissipation Rating: 500.0 MILLIWATTS. 19 total characteristics are documented in the Federal Logistics Information System.