The Microcircuit,memory, cataloged under National Stock Number 5962-01-106-0879, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 11 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-106-0879 |
| Primary Part Number | 41220 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Terminal Surface Treatment | SOLDER |
| Memory Capacity | UNKNOWN |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS NOMINAL POWER SOURCE |
| Memory Device Type | ROM |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Time Rating Per Chacteristic | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Inclosure Material | CERAMIC |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Input Circuit Pattern | 6 INPUT |
| Maximum Power Dissipation Rating | 500.0 MILLIWATTS |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 5331-1D/883C | Mmi/amd (USA) |
| ROM/PROM FAMILY 013 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 722913-50 | Raytheon Company Div Rmd Strategic (USA) |
| 41220 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 722913-2 | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-106-0879 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-106-0879 has 5 cross-referenced part numbers: 5331-1D/883C (Mmi/amd), ROM/PROM FAMILY 013 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722913-50 (Raytheon Company Div Rmd Strategic), 41220 (Raytheon Company Div Rmd Strategic), 722913-2 (Raytheon Company Div Rmd Strategic).
There are 11 known substitutes for 5962-01-106-0879: 5133-00-228-1399, 5950-00-882-1335, 6515-01-044-4638 and 8 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41220: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Inclosure Configuration: DUAL-IN-LINE; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC. 19 total characteristics are documented in the Federal Logistics Information System.