The Microcircuit,memory, cataloged under National Stock Number 5962-01-244-8515, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-244-8515 |
| Primary Part Number | 41486 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Width | 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Time Rating Per Chacteristic | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Features Provided | W/OPEN COLLECTOR AND SCHOTTKY AND PROGRAMMABLE |
| Input Circuit Pattern | 6 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Inclosure Material | CERAMIC AND GLASS |
| Body Height | 0.180 INCHES NOMINAL IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| SNJ54S188J | Texas Instruments Incorporated (USA) |
| 722916-50 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 022 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 41486 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-244-8515 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-244-8515 has 4 cross-referenced part numbers: SNJ54S188J (Texas Instruments Incorporated), 722916-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 022 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 41486 (Raytheon Company Div Rmd Strategic).
There are 12 known substitutes for 5962-01-244-8515: 5110-00-239-7752, 5120-00-608-8248, 3020-00-997-2778 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41486: Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Body Width: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 16 total characteristics are documented in the Federal Logistics Information System.