The Microcircuit,memory, cataloged under National Stock Number 5962-01-237-2535, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 14 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-237-2535 |
| Primary Part Number | 41703-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Inclosure Configuration | DUAL-IN-LINE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Inclosure Material | CERAMIC |
| Features Provided | BIPOLAR AND PROGRAMMABLE AND W/OPEN COLLECTOR |
| Input Circuit Pattern | 6 INPUT |
| Body Height | 0.155 INCHES NOMINAL IN |
| Body Width | 0.270 INCHES MAXIMUM IN |
| Body Length | 0.760 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| HM1-7602-8 | Renesas Electronics America Inc (USA) |
| 41703-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 022 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| SNJ54S188J | Texas Instruments Incorporated (USA) |
| 722916-50 | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-237-2535 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-237-2535 has 5 cross-referenced part numbers: HM1-7602-8 (Renesas Electronics America Inc), 41703-2 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 022 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), SNJ54S188J (Texas Instruments Incorporated), 722916-50 (Raytheon Company Div Rmd Strategic).
There are 12 known substitutes for 5962-01-237-2535: 5962-01-009-3105, 5962-01-009-4167, 5962-01-009-4168 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41703-2: Inclosure Configuration: DUAL-IN-LINE; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Terminal Type and Quantity: 16 PRINTED CIRCUIT; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE. 14 total characteristics are documented in the Federal Logistics Information System.