The Microcircuit,memory, cataloged under National Stock Number 5962-01-236-4115, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 15 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 11 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-236-4115 |
| Primary Part Number | 41705-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Body Width | 0.280 INCHES MAXIMUM IN |
| Input Circuit Pattern | 9 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Features Provided | MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.785 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Height | 0.180 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722916-5 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 722916-50 | Raytheon Company Div Rmd Strategic (USA) |
| 41705-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| SN54S188J | Texas Instruments Incorporated (USA) |
NSN 5962-01-236-4115 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-236-4115 has 5 cross-referenced part numbers: 722916-5 (Raytheon Company Div Rmd Strategic), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722916-50 (Raytheon Company Div Rmd Strategic), 41705-1 (Raytheon Company Div Rmd Strategic), SN54S188J (Texas Instruments Incorporated).
There are 11 known substitutes for 5962-01-236-4115: 5962-01-039-5045, 5962-01-039-5046, 5962-01-067-3072 and 8 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41705-1: Body Width: 0.280 INCHES MAXIMUM IN; Input Circuit Pattern: 9 INPUT; Inclosure Configuration: DUAL-IN-LINE; Features Provided: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE. 15 total characteristics are documented in the Federal Logistics Information System.