The Microcircuit,memory, cataloged under National Stock Number 5962-01-236-6879, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-236-6879 |
| Primary Part Number | G311484-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Inclosure Material | CERAMIC |
| Input Circuit Pattern | 14 INPUT |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | 5.0 VOLTS MAXIMUM POWER SOURCE |
| Time Rating Per Chacteristic | 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | ROM |
| Memory Capacity | UNKNOWN |
| Inclosure Configuration | DUAL-IN-LINE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 1.290 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Width | 0.540 INCHES MAXIMUM IN |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR |
| Body Height | 0.220 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| G311484-1 | Raytheon Company (USA) |
| G311484-1 | Raytheon Company Div Corp (USA) |
| G286699-1 | Raytheon Company Dba Raytheon Co (USA) |
| PRG311484-1 | Raytheon Company Dba Raytheon Co (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| G286699-1 | Raytheon Company Div Corp (USA) |
| G311484-1 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| AM27S43DMB | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| PRG311484-1 | Raytheon Company Div Corp (USA) |
NSN 5962-01-236-6879 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-236-6879 has 9 cross-referenced part numbers: G311484-1 (Raytheon Company), G311484-1 (Raytheon Company Div Corp), G286699-1 (Raytheon Company Dba Raytheon Co), PRG311484-1 (Raytheon Company Dba Raytheon Co), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 4 more.
There are 12 known substitutes for 5962-01-236-6879: 5962-01-194-1341, 5962-01-194-4210, 5962-01-205-1464 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for G311484-1: Inclosure Material: CERAMIC; Input Circuit Pattern: 14 INPUT; Terminal Surface Treatment: SOLDER; Voltage Rating and Type Per Characteristic: 5.0 VOLTS MAXIMUM POWER SOURCE. 17 total characteristics are documented in the Federal Logistics Information System.