The Microcircuit,memory, cataloged under National Stock Number 5962-01-236-6878, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-236-6878 |
| Primary Part Number | G311483-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Height | 0.220 INCHES MAXIMUM IN |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | ROM |
| Voltage Rating and Type Per Characteristic | 5.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Terminal Surface Treatment | SOLDER |
| Body Length | 1.290 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Width | 0.540 INCHES MAXIMUM IN |
| Input Circuit Pattern | 14 INPUT |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| G311483-1 | Raytheon Company (USA) |
| G286699-1 | Raytheon Company Div Corp (USA) |
| G311483-1 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| G311483-1 | Raytheon Company Div Corp (USA) |
| AM27S43DMB | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| G286699-1 | Raytheon Company Dba Raytheon Co (USA) |
| PRG311483-1 | Raytheon Company Div Corp (USA) |
| PRG311483-1 | Raytheon Company Dba Raytheon Co (USA) |
NSN 5962-01-236-6878 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-236-6878 has 9 cross-referenced part numbers: ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), G311483-1 (Raytheon Company), G286699-1 (Raytheon Company Div Corp), G311483-1 (Raytheon Company Dba Raytheon Co), G311483-1 (Raytheon Company Div Corp) and 4 more.
There are 12 known substitutes for 5962-01-236-6878: 5962-01-194-1341, 5962-01-194-4210, 5962-01-205-1464 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for G311483-1: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Body Height: 0.220 INCHES MAXIMUM IN; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Memory Device Type: ROM. 17 total characteristics are documented in the Federal Logistics Information System.