The Microcircuit,memory, cataloged under National Stock Number 5962-01-236-6689, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 6 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-236-6689 |
| Primary Part Number | 42654 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Inclosure Material | CERAMIC |
| Memory Device Type | ROM |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Surface Treatment | SOLDER |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Width | 0.302 INCHES MAXIMUM IN |
| Maximum Power Dissipation Rating | 332.8 MILLIWATTS |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE |
| Input Circuit Pattern | 6 INPUT |
| Body Length | 0.785 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Height | 0.175 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| S82S123F/883C | Philips Semiconductors Inc (USA) |
| 722913-50 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 013 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 42654 | Thredco Corp (USA) |
| 42654 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| HM1-7603-8 | Renesas Electronics America Inc (USA) |
NSN 5962-01-236-6689 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-236-6689 has 6 cross-referenced part numbers: S82S123F/883C (Philips Semiconductors Inc), 722913-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 013 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 42654 (Thredco Corp), 42654 (Raytheon Company Div Rmd Strategic) and 1 more.
There are 12 known substitutes for 5962-01-236-6689: 2530-00-530-4069, 5962-01-031-1919, 5962-01-052-3846 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 42654: Inclosure Material: CERAMIC; Memory Device Type: ROM; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 18 total characteristics are documented in the Federal Logistics Information System.