The Microcircuit,memory, cataloged under National Stock Number 5962-01-236-6687, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-236-6687 |
| Primary Part Number | 42651 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Terminal Surface Treatment | SOLDER |
| Memory Capacity | UNKNOWN |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Time Rating Per Chacteristic | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 6 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Length | 0.785 INCHES MAXIMUM IN |
| Body Height | 0.175 INCHES MAXIMUM IN |
| Body Width | 0.302 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Maximum Power Dissipation Rating | 332.8 MILLIWATTS |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722913-50 | Raytheon Company Div Rmd Strategic (USA) |
| S82S123F/883C | Philips Semiconductors Inc (USA) |
| ROM/PROM FAMILY 013 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| HM1-7603-8 | Renesas Electronics America Inc (USA) |
| 42651 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-236-6687 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-236-6687 has 5 cross-referenced part numbers: 722913-50 (Raytheon Company Div Rmd Strategic), S82S123F/883C (Philips Semiconductors Inc), ROM/PROM FAMILY 013 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), HM1-7603-8 (Renesas Electronics America Inc), 42651 (Raytheon Company Div Rmd Strategic).
There are 12 known substitutes for 5962-01-236-6687: 4730-00-119-0536, 5962-01-031-1919, 5962-01-052-3846 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 42651: Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE; Memory Device Type: ROM; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 18 total characteristics are documented in the Federal Logistics Information System.