The Microcircuit,memory, cataloged under National Stock Number 5962-01-031-1919, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-031-1919 |
| Primary Part Number | 722913-50 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Memory Capacity | UNKNOWN |
| Inclosure Material | CERAMIC AND GLASS |
| Features Provided | HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | -1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 500.0 MILLIWATTS |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Input Circuit Pattern | 6 INPUT |
| Body Height | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Width | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722913-50 | Raytheon Company Div Rmd Strategic (USA) |
| S82S123F/883C | Philips Semiconductors Inc (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| S82S123F | Philips Semiconductors Inc (USA) |
| 583R524H01 | Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp (USA) |
NSN 5962-01-031-1919 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-031-1919 has 5 cross-referenced part numbers: 722913-50 (Raytheon Company Div Rmd Strategic), S82S123F/883C (Philips Semiconductors Inc), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), S82S123F (Philips Semiconductors Inc), 583R524H01 (Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp).
There are 12 known substitutes for 5962-01-031-1919: 5962-01-027-3807, 5962-01-052-3846, 5962-01-136-9388 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 722913-50: Memory Capacity: UNKNOWN; Inclosure Material: CERAMIC AND GLASS; Features Provided: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC. 18 total characteristics are documented in the Federal Logistics Information System.