The Microcircuit,memory, cataloged under National Stock Number 5962-01-184-1162, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is National Semiconductor Corporation. Government technical data includes 20 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 23 commercial cross-references from 8 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Cancelled.
| Parameter | Value |
|---|---|
| NSN | 5962-01-184-1162 |
| Primary Part Number | PAL14H4MJ/883B |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | National Semiconductor Corporation |
| Status | CANCELLED |
| Specification/standard Data | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
| Time Rating Per Chacteristic | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| Current Rating Per Characteristic | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Case Outline Source and Designator | D-8 MIL-M-38510 |
| Features Provided | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND HERMETICALLY SEALED |
| Inclosure Material | CERAMIC |
| Test Data Document | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Body Length | 1.060 INCHES MAXIMUM IN |
| Input Circuit Pattern | 28 INPUT |
| Memory Device Type | PAL |
| Voltage Rating and Type Per Characteristic | 5.0 VOLTS NOMINAL POWER SOURCE |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Maximum Power Dissipation Rating | 2.0 WATTS |
| Terminal Surface Treatment | SOLDER |
| Acquisition Status | CANCELLED |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| PAL14H4MJ/883B | National Semiconductor Corporation (USA) |
| M38510/50303BRX | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| DMPAL14H4J/883 | National Semiconductor Corporation (USA) |
| DMPAL14H4J | National Semiconductor Corporation (USA) |
| PAL14H4MJ | Mmi/amd (USA) |
| MIL-M-38510/503 | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 7908688-05 | Lockheed Martin Corp Dba Lockheed Martin Div Mst - Eagan (USA) |
| 5962-8103503BRX | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| 5962-3850303BRB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| DMPAL14H4MJ/883B | National Semiconductor Corporation (USA) |
| 5962-3850303BRX | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 5962-8103503BRB | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| 48-066386-02 | Northrop Grumman Systems Corporation Div Es Defensive Systems Division (USA) |
| M38510/50303BRA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 5962-3850303BRA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 81035 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| PAL14H4MJ/883B | Mmi/amd (USA) |
| 14H4 | Mmi/amd (USA) |
| 8103503RB | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| ROM/PROM HEAD 060 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-184-1162 is a Microcircuit,memory, manufactured by National Semiconductor Corporation, classified under FSC 5962 (No Item Name Available). Status: cancelled.
NSN 5962-01-184-1162 has 23 cross-referenced part numbers: PAL14H4MJ/883B (National Semiconductor Corporation), M38510/50303BRX (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), DMPAL14H4J/883 (National Semiconductor Corporation), DMPAL14H4J (National Semiconductor Corporation), PAL14H4MJ (Mmi/amd) and 18 more.
There are 12 known substitutes for 5962-01-184-1162: 5962-01-174-1380, 5962-01-181-3107, 5962-01-181-3831 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for PAL14H4MJ/883B: Specification/standard Data: 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION; Time Rating Per Chacteristic: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Inclosure Configuration: DUAL-IN-LINE; Output Logic Form: BIPOLAR METAL-OXIDE SEMICONDUCTOR. 20 total characteristics are documented in the Federal Logistics Information System.
NSN 5962-01-184-1162 is currently cancelled. Check with the Defense Logistics Agency for current availability and authorized substitutes.