The Transistor, cataloged under National Stock Number 5961-00-596-3297, is classified within Federal Supply Class 5961 (Semiconductor Devices and Associated Hardware) of the Electrical and Electronic Equipment Components group. The manufacturer of record is Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc. Government technical data includes 11 specifications, cited from the U.S. Government catalog. The record lists 2 manufacturer part numbers for this item, enabling identification through both NSN and commercial part number lookups. 2 additional reference documents (drawings, advisory and superseded references) are recorded in the U.S. Government catalog. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-00-596-3297 |
| Primary Part Number | 2N6166 |
| Item Name | Transistor |
| FSC / FSG | 5961 / 59 — Semiconductor Devices and Associated Hardware |
| Manufacturer | Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc |
| Status | ACTIVE |
| Voltage Rating in Volts Per Characteristic | 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 35.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| Maximum Operating Temp Per Measurement Point | 200.0 CELSIUS JUNCTION DEGC |
| Mounting Facility Quantity | 2 |
| Mounting Method | UNTHREADED HOLE(S) |
| Semiconductor Material | SILICON |
| Current Rating Per Characteristic | 9.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 30.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN |
| Precious Material and Location | INTERNAL METALIZATION GOLD |
| Material | CERAMIC ENCLOSURE |
| Terminal Type and Quantity | 4 RIBBON |
| Electrode Internally-Electrically Connected to Case | COLLECTOR |
| Power Rating Per Characteristic | 117.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| Acquisition Status | ACTIVE |
| DEMIL Code | DEMIL A — No Demilitarization Required |
| Hazard | No hazard code in the DLA record (HMIC N) |
| Criticality Code | X |
| Part Number | Manufacturer |
|---|---|
| 2N6166 PRIMARY | Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc (USA) |
| ASI10790 | Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc (USA) |
| Reference | Meaning |
|---|---|
| 048856-0002 | 5/9 Secondary reference Thales Usa, Inc. Div Air Mobility Solutions ("ams") |
| SPF750 | 5/9 Secondary reference Freescale Semiconductor, Inc. |
NSN 5961-00-596-3297 is a Transistor, manufactured by Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc, classified under FSC 5961, Semiconductor Devices and Associated Hardware. Status: active.
NSN 5961-00-596-3297 has 2 manufacturer part numbers on file: 2N6166 (Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc), ASI10790 (Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc).
Key specifications for 2N6166: Overall Height: 0.280 INCHES MAXIMUM IN; Voltage Rating in Volts Per Characteristic: 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 35.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN; Maximum Operating Temp Per Measurement Point: 200.0 CELSIUS JUNCTION DEGC; Mounting Facility Quantity: 2. 11 specifications are documented in the U.S. Government catalog.
No hazard code in the DLA record (HMIC N). Hazard information on this page is shown exactly as it appears in the DLA record.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-16.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.