2N6166: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.980 INCHES MAXIMUM IN, overall_height: 0.280 INCHES MAXIMUM IN, overall_length: 1.050 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-290-1880, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.980 INCHES MAXIMUM IN |
| overall_height | 0.280 INCHES MAXIMUM IN |
| overall_length | 1.050 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 4 RIBBON |
| precious_material_and_location | INTERNAL METALIZATION GOLD |
| NSN | 5961-00-290-1880 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.610 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH | 0.393 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 9.00 AMPERES NOMINAL COLLECTOR CURRENT, DC |
No substitute or cross-reference records for this part.