ASI10790 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

ASI10790: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.980 INCHES MAXIMUM IN, overall_height: 0.280 INCHES MAXIMUM IN, overall_length: 1.050 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-596-3297, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

ASI10790

NSN: 5961-00-596-3297
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 4U751 — ADVANCED SEMICONDUCTOR,INC. DBA ADVANCED SEMICONDUCTOR INC (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.980 INCHES MAXIMUM IN
overall_height	0.280 INCHES MAXIMUM IN
overall_length	1.050 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	4 RIBBON
precious_material_and_location	INTERNAL METALIZATION GOLD
power_rating_per_characteristic	117.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	9.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 30.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
NSN	5961-00-596-3297

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 35.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.280 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 35.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.050 INCHES MAXIMUM IN
OVERALL WIDTH	0.980 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	9.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 30.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
SPECIAL FEATURES	JUNCTION PATTERN ARRANGEMENT: NPN

SUBSTITUTES & CROSS-REFERENCES 2

048856-0002Reference document

Same NSN cross-reference

Reference document — Secondary reference

SPF750Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is ASI10790?

ASI10790 is a TRANSISTOR.

What parts can replace ASI10790?

There are 2 known substitutes for ASI10790: 048856-0002, SPF750. Substitute compatibility should be verified for your specific system.

What is the NSN for ASI10790?

ASI10790 is cataloged in the U.S. Government catalog under NSN 5961-00-596-3297. This indicates validated use in U.S. government and defense supply chains.

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ASI10790 — TRANSISTOR

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