SS-32562: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 5.02 MILLIMETERS MAXIMUM MM, overall_height: 8.63 MILLIMETERS MAXIMUM MM, overall_length: 6.29 MILLIMETERS MAXIMUM MM, mounting_method: TERMINAL, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-374-7142, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 5.02 MILLIMETERS MAXIMUM MM |
| overall_height | 8.63 MILLIMETERS MAXIMUM MM |
| overall_length | 6.29 MILLIMETERS MAXIMUM MM |
| mounting_method | TERMINAL |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| power_rating_per_characteristic | 1.3 WATTS NOMINAL TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | -1.60 AMPERES NOMINAL DRAIN CURRENT |
| voltage_rating_in_volts_per_characteristic | -60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-374-7142 |
| OVERALL HEIGHT | 8.63 MILLIMETERS MAXIMUM MM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 6.29 MILLIMETERS MAXIMUM MM |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 5.02 MILLIMETERS MAXIMUM MM |
| CURRENT RATING PER CHARACTERISTIC | -1.60 AMPERES NOMINAL DRAIN CURRENT |
| MATERIAL | PLASTIC ENCLOSURE |