IRFD9024 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

IRFD9024: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 5.02 MILLIMETERS MAXIMUM MM, overall_height: 8.63 MILLIMETERS MAXIMUM MM, overall_length: 6.29 MILLIMETERS MAXIMUM MM, mounting_method: TERMINAL, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-374-7142, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

IRFD9024

NSN: 5961-01-374-7142
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 59993 — INTERNATIONAL RECTIFIER CORPORATION (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	5.02 MILLIMETERS MAXIMUM MM
overall_height	8.63 MILLIMETERS MAXIMUM MM
overall_length	6.29 MILLIMETERS MAXIMUM MM
mounting_method	TERMINAL
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
power_rating_per_characteristic	1.3 WATTS NOMINAL TOTAL POWER DISSIPATION
current_rating_per_characteristic	-1.60 AMPERES NOMINAL DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	-60.0 NOMINAL DRAIN TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
NSN	5961-01-374-7142

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 NOMINAL DRAIN TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	8.63 MILLIMETERS MAXIMUM MM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-60.0 NOMINAL DRAIN TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	6.29 MILLIMETERS MAXIMUM MM
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	5.02 MILLIMETERS MAXIMUM MM
CURRENT RATING PER CHARACTERISTIC	-1.60 AMPERES NOMINAL DRAIN CURRENT
MATERIAL	PLASTIC ENCLOSURE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

SS-32562Reference document

Same NSN cross-reference

Reference document — Secondary reference

Q65-0002-002Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is IRFD9024?

IRFD9024 is a TRANSISTOR.

What parts can replace IRFD9024?

There are 2 known substitutes for IRFD9024: SS-32562, Q65-0002-002. Substitute compatibility should be verified for your specific system.

What is the NSN for IRFD9024?

IRFD9024 is cataloged in the U.S. Government catalog under NSN 5961-01-374-7142. This indicates validated use in U.S. government and defense supply chains.

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IRFD9024 — TRANSISTOR

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