The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: SILICON, overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN, overall_length: 1.563 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-150-8699, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON |
| overall_width | 1.050 INCHES MAXIMUM IN |
| overall_height | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN |
| overall_length | 1.563 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| operating_temp_range | -55.0 TO 150.0 CELSIUS DEGC |
| semiconductor_material | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| NSN | 5961-01-150-8699 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM IN |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| MOUNTING FACILITY QUANTITY | 2 |