SD2012 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

SD2012: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.360 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 1.062 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-243-6400, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

SD2012

NSN: 5961-00-243-6400
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50891 — SEMICONDUCTOR TECHNOLOGY, INC. DBA SEMICONDUCTOR TECHNOLOGY INC (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.360 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	1.062 INCHES MINIMUM IN
overall_diameter	0.230 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	8.0 MAXIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point	60.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-243-6400

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 60.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.062 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	8.0 MAXIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	60.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	1.062 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.360 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 3

1N470Reference document

Same NSN cross-reference

Reference document — Secondary reference

10673205Reference document

Same NSN cross-reference

Reference document — Secondary reference

CA39536Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is SD2012?

SD2012 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace SD2012?

There are 3 known substitutes for SD2012: 1N470, 10673205, CA39536. Substitute compatibility should be verified for your specific system.

What is the NSN for SD2012?

SD2012 is cataloged in the U.S. Government catalog under NSN 5961-00-243-6400. This indicates validated use in U.S. government and defense supply chains.

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SD2012 — SEMICONDUCTOR DEVICE,DIODE

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