1N470 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N470: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.370 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.125 INCHES NOMINAL IN, overall_diameter: 0.200 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-243-6400, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N470

NSN: 5961-00-243-6400
NIINs: 002436400, 005576230
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50891 — SEMICONDUCTOR TECHNOLOGY, INC. DBA SEMICONDUCTOR TECHNOLOGY INC (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.370 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.125 INCHES NOMINAL IN
overall_diameter	0.200 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	7.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
maximum_operating_temp_per_measurement_point	200.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-243-6400

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 60.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.062 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	8.0 MAXIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	60.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	1.062 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.360 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 3

SD2012Reference document

Same NSN cross-reference

Reference document — Secondary reference

10673205Reference document

Same NSN cross-reference

Reference document — Secondary reference

CA39536Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N470?

1N470 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N470?

There are 3 known substitutes for 1N470: SD2012, 10673205, CA39536. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N470?

1N470 is cataloged in the U.S. Government catalog under NSN 5961-00-243-6400. This indicates validated use in U.S. government and defense supply chains.

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1N470 — SEMICONDUCTOR DEVICE,DIODE

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