ROM/PROM HEAD 105 — Technical Data Sheet

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— · COMPONENT

WHAT YOU NEED TO KNOW

Verify manufacturer and server generation compatibility Check if Option PN or Spare PN — same part, different channel

Confirm exact part number — similar PNs may be different parts

PRODUCT OVERVIEW

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN, body_height: 0.185 INCHES MAXIMUM IN, body_length: 1.060 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND MONOLITHIC, output_logic_form: BIPOLAR METAL-OXIDE SEMICONDUCTOR, inclosure_material: CERAMIC. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-01-248-8654, indicating validated use in U.S.

government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

ROM/PROM HEAD 105

NSN: 5962-01-248-8654
FSC: 5962
CAGE: 16236 — DLA LAND AND MARITIME DBA ENGINEERING AND TECHNICAL SUPPORT DIV DOCUMENT STANDARDIZATION DIVISION (VENDOR ITEM DRAWINGS) (USA)

SPECIFICATIONS

body_width	0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN
body_height	0.185 INCHES MAXIMUM IN
body_length	1.060 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
output_logic_form	BIPOLAR METAL-OXIDE SEMICONDUCTOR
inclosure_material	CERAMIC
memory_device_type	PAL
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
input_circuit_pattern	12 INPUT
inclosure_configuration	DUAL-IN-LINE
terminal_surface_treatment	SOLDER
NSN	5962-01-248-8654

COMPONENT DIAGRAM

KEY FEATURES

•

OUTPUT LOGIC FORM: BIPOLAR METAL-OXIDE SEMICONDUCTOR

•

TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS

•

FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND MONOLITHIC

•

BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

•

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK

•

MEMORY DEVICE TYPE: PAL

•

MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS (FLIS)

OUTPUT LOGIC FORM	BIPOLAR METAL-OXIDE SEMICONDUCTOR
TIME RATING PER CHACTERISTIC	45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
FEATURES PROVIDED	HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
BODY WIDTH	0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
MEMORY DEVICE TYPE	PAL
MAXIMUM POWER DISSIPATION RATING	2.0 WATTS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.0 VOLTS NOMINAL POWER SOURCE
TERMINAL SURFACE TREATMENT	SOLDER

VERIFIED SUBSTITUTES & CROSS-REFERENCES 28

5962-3850309BRXInterchangeable