RELEASE 6376 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

RELEASE 6376: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.420 INCHES MAXIMUM IN, overall_height: 0.190 INCHES MAXIMUM IN, overall_length: 0.650 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), terminal_length: 0.500 INCHES MINIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-043-8419, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

RELEASE 6376

NSN: 5961-01-043-8419
NIINs: 010438419, 011637845
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.420 INCHES MAXIMUM IN
overall_height	0.190 INCHES MAXIMUM IN
overall_length	0.650 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
terminal_length	0.500 INCHES MINIMUM IN
semiconductor_material	SILICON
terminal_circle_diameter	0.210 INCHES MAXIMUM IN
mounting_facility_quantity	1
terminal_type_and_quantity	3 PIN
specification/standard_data	80131-RELEASE6376 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
NSN	5961-01-043-8419

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.355 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	105.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.355 INCHES MAXIMUM IN
OVERALL WIDTH	0.420 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	12.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
MATERIAL	PLASTIC ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 4

2N6344Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

2N6344AReference document

Same NSN cross-reference

Reference document — Secondary reference

JAN2N6344AReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

139-0001Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is RELEASE 6376?

RELEASE 6376 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace RELEASE 6376?

There are 4 known substitutes for RELEASE 6376: 2N6344, 2N6344A, JAN2N6344A and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for RELEASE 6376?

RELEASE 6376 is cataloged in the U.S. Government catalog under NSN 5961-01-043-8419. This indicates validated use in U.S. government and defense supply chains.

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RELEASE 6376 — SEMICONDUCTOR DEVICE,THYRISTOR

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