JAN2N6344A — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

JAN2N6344A: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.420 INCHES MAXIMUM IN, overall_height: 0.355 INCHES MAXIMUM IN, overall_length: 0.355 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-043-8419, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

JAN2N6344A

NSN: 5961-01-043-8419
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 81349 — MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.420 INCHES MAXIMUM IN
overall_height	0.355 INCHES MAXIMUM IN
overall_length	0.355 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
semiconductor_material	SILICON
mounting_facility_quantity	1
terminal_type_and_quantity	3 PIN AND 1 TAB, SOLDER LUG
current_rating_per_characteristic	12.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
voltage_rating_in_volts_per_characteristic	600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
maximum_operating_temp_per_measurement_point	105.0 CELSIUS JUNCTION DEGC
NSN	5961-01-043-8419

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.355 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	105.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.355 INCHES MAXIMUM IN
OVERALL WIDTH	0.420 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	12.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
MATERIAL	PLASTIC ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 4

2N6344Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

RELEASE 6376Reference document

Same NSN cross-reference

Reference document — Secondary reference

2N6344AReference document

Same NSN cross-reference

Reference document — Secondary reference

139-0001Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is JAN2N6344A?

JAN2N6344A is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace JAN2N6344A?

There are 4 known substitutes for JAN2N6344A: 2N6344, RELEASE 6376, 2N6344A and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for JAN2N6344A?

JAN2N6344A is cataloged in the U.S. Government catalog under NSN 5961-01-043-8419. This indicates validated use in U.S. government and defense supply chains.

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