PR979738-113 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

PR979738-113: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: EEPROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-373-9119, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

PR979738-113

NSN: 5962-01-373-9119
FSC: 5962 — Microcircuits, Electronic
CAGE: 3B150 — RAYTHEON COMPANY DBA RAYTHEON CO (USA)

SPECIFICATIONS

features_provided	BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED
output_logic_form	TRANSISTOR-TRANSISTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	EEPROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
hybrid_technology_type	MONOLITHIC
end_item_identification	DISPLAY CONSO E/I FSCM 49956
inclosure_configuration	DUAL-IN-LINE
terminal_surface_treatment	SOLDER
current_rating_per_characteristic	100.00 MILLIAMPERES MAXIMUM OUTPUT
case_outline_source_and_designator	D-2 MIL-M-38510
NSN	5962-01-373-9119

COMPONENT DIAGRAM

KEY FEATURES

•

HYBRID TECHNOLOGY TYPE: MONOLITHIC

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

FEATURES PROVIDED: BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

PURCHASE DESCRIPTION IDENTIFICATION: 49956-979738-113

•

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT

•

MEMORY DEVICE TYPE: EEPROM

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

HYBRID TECHNOLOGY TYPE	MONOLITHIC
INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
FEATURES PROVIDED	BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED
INCLOSURE CONFIGURATION	DUAL-IN-LINE
PURCHASE DESCRIPTION IDENTIFICATION	49956-979738-113
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES MAXIMUM OUTPUT
MEMORY DEVICE TYPE	EEPROM
CASE OUTLINE SOURCE AND DESIGNATOR	D-2 MIL-M-38510
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC

SUBSTITUTES & CROSS-REFERENCES 4

979738-113Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

MMI6301-JReference document

Same NSN cross-reference

Reference document — Secondary reference

ROM/PROMReference document

Same NSN cross-reference

Reference document — Secondary reference

DM54S287J/883Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Demilitarization required — mutilation + specific procedure

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FREQUENTLY ASKED QUESTIONS

What is PR979738-113?

PR979738-113 is a MICROCIRCUIT,MEMORY.

What parts can replace PR979738-113?

There are 4 known substitutes for PR979738-113: 979738-113, MMI6301-J, ROM/PROM and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for PR979738-113?

PR979738-113 is cataloged in the U.S. Government catalog under NSN 5962-01-373-9119. This indicates validated use in U.S. government and defense supply chains.

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PR979738-113 — MICROCIRCUIT,MEMORY

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