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979738-113 — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

979738-113: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: EEPROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-373-9119, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
979738-113
NSN: 5962-01-373-9119
FSC: 5962 — Microcircuits, Electronic
CAGE: 3B150 — RAYTHEON COMPANY DBA RAYTHEON CO (USA)
SPECIFICATIONS
features_providedBIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED
output_logic_formTRANSISTOR-TRANSISTOR LOGIC
inclosure_materialCERAMIC
memory_device_typeEEPROM
storage_temp_range-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range-55.0 TO 125.0 CELSIUS DEGC
hybrid_technology_typeMONOLITHIC
end_item_identificationDISPLAY CONSO E/I FSCM 49956
inclosure_configurationDUAL-IN-LINE
terminal_surface_treatmentSOLDER
current_rating_per_characteristic100.00 MILLIAMPERES MAXIMUM OUTPUT
case_outline_source_and_designatorD-2 MIL-M-38510
NSN5962-01-373-9119
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN 979738-113 MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
HYBRID TECHNOLOGY TYPE: MONOLITHIC
•
INCLOSURE MATERIAL: CERAMIC
•
TERMINAL SURFACE TREATMENT: SOLDER
•
FEATURES PROVIDED: BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED
•
INCLOSURE CONFIGURATION: DUAL-IN-LINE
•
PURCHASE DESCRIPTION IDENTIFICATION: 49956-979738-113
•
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT
•
MEMORY DEVICE TYPE: EEPROM
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
HYBRID TECHNOLOGY TYPEMONOLITHIC
INCLOSURE MATERIALCERAMIC
TERMINAL SURFACE TREATMENTSOLDER
FEATURES PROVIDEDBIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED
INCLOSURE CONFIGURATIONDUAL-IN-LINE
PURCHASE DESCRIPTION IDENTIFICATION49956-979738-113
CURRENT RATING PER CHARACTERISTIC100.00 MILLIAMPERES MAXIMUM OUTPUT
MEMORY DEVICE TYPEEEPROM
CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
STORAGE TEMP RANGE-65.0 TO 150.0 CELSIUS DEGC
SUBSTITUTES & CROSS-REFERENCES 4
MMI6301-JReference document
Same NSN cross-reference
Reference document — Secondary reference
ROM/PROMReference document
Same NSN cross-reference
Reference document — Secondary reference
DM54S287J/883Reference document
Same NSN cross-reference
Reference document — Secondary reference
PR979738-113Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Demilitarization required — mutilation + specific procedure
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FREQUENTLY ASKED QUESTIONS
What is 979738-113?
979738-113 is a MICROCIRCUIT,MEMORY.
What parts can replace 979738-113?
There are 4 known substitutes for 979738-113: MMI6301-J, ROM/PROM, DM54S287J/883 and 1 more. Substitute compatibility should be verified for your specific system.
What is the NSN for 979738-113?
979738-113 is cataloged in the U.S. Government catalog under NSN 5962-01-373-9119. This indicates validated use in U.S. government and defense supply chains.
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