N82S123F — MICROCIRCUIT,DIGITAL

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

N82S123F: MICROCIRCUIT,DIGITAL.

The MICROCIRCUIT,DIGITAL is a the manufacturer industrial component. Key specifications include body_width: 0.302 INCHES MAXIMUM IN, body_height: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN, body_length: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, memory_capacity: UNKNOWN, features_provided: PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-045-1025, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

N82S123F

NSN: 5962-01-045-1025
NIINs: 010451025, 010451026, 010451037, 010567067, 010785485, 011139502, 011201247, 011331002, 011359086, 012763977, 012763978, 012933878, 012937710, 013740105, 013770726
FSC: 5962 — Microcircuits, Electronic
CAGE: 18324 — PHILIPS SEMICONDUCTORS INC (USA)

SPECIFICATIONS

body_width	0.302 INCHES MAXIMUM IN
body_height	0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN
body_length	0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
memory_capacity	UNKNOWN
features_provided	PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT
output_logic_form	TRANSISTOR-TRANSISTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	PROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	+0.0 TO 70.0 CELSIUS DEGC
input_circuit_pattern	6 INPUT
hybrid_technology_type	MONOLITHIC
NSN	5962-01-045-1025

COMPONENT DIAGRAM

KEY FEATURES

•

INPUT CIRCUIT PATTERN: 6 INPUT

•

INCLOSURE MATERIAL: CERAMIC AND GLASS

•

TERMINAL SURFACE TREATMENT: SOLDER

•

BODY WIDTH: 0.302 INCHES MAXIMUM IN

•

BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN

•

FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: ROM

TECHNICAL CHARACTERISTICS

INPUT CIRCUIT PATTERN	6 INPUT
INCLOSURE MATERIAL	CERAMIC AND GLASS
TERMINAL SURFACE TREATMENT	SOLDER
BODY WIDTH	0.302 INCHES MAXIMUM IN
BODY HEIGHT	0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	ROM
BODY LENGTH	0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC

SUBSTITUTES & CROSS-REFERENCES 2

IM5610CReference document

Same NSN cross-reference

Reference document — Secondary reference

ES52SPL1CAOReference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is N82S123F?

N82S123F is a MICROCIRCUIT,DIGITAL.

What parts can replace N82S123F?

There are 2 known substitutes for N82S123F: IM5610C, ES52SPL1CAO. Substitute compatibility should be verified for your specific system.

What is the NSN for N82S123F?

N82S123F is cataloged in the U.S. Government catalog under NSN 5962-01-045-1025. This indicates validated use in U.S. government and defense supply chains.

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