ES52SPL1CAO — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

ES52SPL1CAO: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.302 INCHES MAXIMUM IN, body_height: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN, body_length: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, memory_capacity: UNKNOWN, features_provided: HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-045-1025, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

ES52SPL1CAO

NSN: 5962-01-045-1025
FSC: 5962 — Microcircuits, Electronic
CAGE: 57230 — GOULD INC SIMULATION SYSTEMS DIV (USA)

SPECIFICATIONS

body_width	0.302 INCHES MAXIMUM IN
body_height	0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN
body_length	0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
memory_capacity	UNKNOWN
features_provided	HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
output_logic_form	TRANSISTOR-TRANSISTOR LOGIC
inclosure_material	CERAMIC AND GLASS
memory_device_type	ROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	+0.0 TO 75.0 CELSIUS DEGC
input_circuit_pattern	6 INPUT
inclosure_configuration	DUAL-IN-LINE
NSN	5962-01-045-1025

COMPONENT DIAGRAM

KEY FEATURES

•

INPUT CIRCUIT PATTERN: 6 INPUT

•

INCLOSURE MATERIAL: CERAMIC AND GLASS

•

TERMINAL SURFACE TREATMENT: SOLDER

•

BODY WIDTH: 0.302 INCHES MAXIMUM IN

•

BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN

•

FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: ROM

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INPUT CIRCUIT PATTERN	6 INPUT
INCLOSURE MATERIAL	CERAMIC AND GLASS
TERMINAL SURFACE TREATMENT	SOLDER
BODY WIDTH	0.302 INCHES MAXIMUM IN
BODY HEIGHT	0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	ROM
BODY LENGTH	0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC

SUBSTITUTES & CROSS-REFERENCES 2

N82S123FReference document

Same NSN cross-reference

Reference document — Secondary reference

IM5610CReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is ES52SPL1CAO?

ES52SPL1CAO is a MICROCIRCUIT,MEMORY.

What parts can replace ES52SPL1CAO?

There are 2 known substitutes for ES52SPL1CAO: N82S123F, IM5610C. Substitute compatibility should be verified for your specific system.

What is the NSN for ES52SPL1CAO?

ES52SPL1CAO is cataloged in the U.S. Government catalog under NSN 5962-01-045-1025. This indicates validated use in U.S. government and defense supply chains.

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