MMBF2201NT1G — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MMBF2201NT1G: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.083 INCHES NOMINAL IN, overall_height: 0.035 INCHES NOMINAL IN, overall_length: 0.083 INCHES NOMINAL IN, mounting_method: TERMINAL, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-660-7261, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MMBF2201NT1G

NSN: 5961-01-660-7261
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.083 INCHES NOMINAL IN
overall_height	0.035 INCHES NOMINAL IN
overall_length	0.083 INCHES NOMINAL IN
mounting_method	TERMINAL
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
power_rating_per_characteristic	150.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	300.0 MILLIAMPERES NOMINAL DRAIN CURRENT
part_name_assigned_by_controlling_agency	POWER MOSFET
voltage_rating_in_volts_per_characteristic	20.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
NSN	5961-01-660-7261

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

•

CURRENT RATING PER CHARACTERISTIC: 300.0 MILLIAMPERES NOMINAL DRAIN CURRENT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.035 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.083 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	0.083 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	300.0 MILLIAMPERES NOMINAL DRAIN CURRENT
PART NAME ASSIGNED BY CONTROLLING AGENCY	POWER MOSFET
MATERIAL	PLASTIC ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

MMBF2201NT1Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MMBF2201NT1G?

MMBF2201NT1G is a TRANSISTOR.

What parts can replace MMBF2201NT1G?

There is 1 known substitute for MMBF2201NT1G: MMBF2201NT1. Substitute compatibility should be verified for your specific system.

What is the NSN for MMBF2201NT1G?

MMBF2201NT1G is cataloged in the U.S. Government catalog under NSN 5961-01-660-7261. This indicates validated use in U.S. government and defense supply chains.

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MMBF2201NT1G — TRANSISTOR

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