MMBF2201NT1: MICROCIRCUIT,DIGITAL.
The MICROCIRCUIT,DIGITAL is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 1.80 MILLIMETERS MINIMUM AND 2.20 MILLIMETERS MAXIMUM MM, overall_height: 0.80 MILLIMETERS MINIMUM AND 1.00 MILLIMETERS MAXIMUM MM, overall_length: 0.083 INCHES NOMINAL IN, mounting_method: TERMINAL, output_logic_form: METAL OXIDE-SEMICONDUCTOR LOGIC. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-660-7261, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 1.80 MILLIMETERS MINIMUM AND 2.20 MILLIMETERS MAXIMUM MM |
| overall_height | 0.80 MILLIMETERS MINIMUM AND 1.00 MILLIMETERS MAXIMUM MM |
| overall_length | 0.083 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| output_logic_form | METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | PLASTIC |
| storage_temp_range | -55.0 TO 150.0 CELSIUS DEGC |
| operating_temp_range | -55.0 TO 150.0 CELSIUS DEGC |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| inclosure_configuration | FLAT PACK |
| NSN | 5961-01-660-7261 |
| OVERALL HEIGHT | 0.035 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.083 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 0.083 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 300.0 MILLIAMPERES NOMINAL DRAIN CURRENT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | POWER MOSFET |
| MATERIAL | PLASTIC ENCLOSURE |
No substitute or cross-reference records for this part.