MFE121 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MFE121: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.730 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT-DUAL GATE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-163-3689, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MFE121

NSN: 5961-00-163-3689
NIINs: 001633689, 011648398
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 5V1P1 — ON SEMICONDUCTOR CORPORATION (USA)

SPECIFICATIONS

overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.730 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT-DUAL GATE
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
power_rating_per_characteristic	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
NSN	5961-00-163-3689

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.219 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.219 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.188 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT

SUBSTITUTES & CROSS-REFERENCES 4

MFE3007Reference document

Same NSN cross-reference

Reference document — Secondary reference

DMS 90112BReference document

Same NSN cross-reference

Reference document — Secondary reference

MFE3007AReference document

Same NSN cross-reference

Reference document — Secondary reference

121-784Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MFE121?

MFE121 is a TRANSISTOR.

What parts can replace MFE121?

There are 4 known substitutes for MFE121: MFE3007, DMS 90112B, MFE3007A and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for MFE121?

MFE121 is cataloged in the U.S. Government catalog under NSN 5961-00-163-3689. This indicates validated use in U.S. government and defense supply chains.

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MFE121 — TRANSISTOR

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