DMS 90112B — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

DMS 90112B: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT-DUAL GATE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-163-3689, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

DMS 90112B

NSN: 5961-00-163-3689
NIINs: 001633689, 012142383, 012179261
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 16236 — DLA LAND AND MARITIME DBA ENGINEERING AND TECHNICAL SUPPORT DIV DOCUMENT STANDARDIZATION DIVISION (VENDOR ITEM DRAWINGS) (USA)

SPECIFICATIONS

overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.230 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT-DUAL GATE
semiconductor_material	SILICON ALL TRANSISTOR
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
component_name_and_quantity	2 TRANSISTOR
power_rating_per_characteristic	300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
NSN	5961-00-163-3689

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.219 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.219 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.188 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT

SUBSTITUTES & CROSS-REFERENCES 4

MFE121Reference document

Same NSN cross-reference

Reference document — Secondary reference

MFE3007Reference document

Same NSN cross-reference

Reference document — Secondary reference

MFE3007AReference document

Same NSN cross-reference

Reference document — Secondary reference

121-784Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is DMS 90112B?

DMS 90112B is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace DMS 90112B?

There are 4 known substitutes for DMS 90112B: MFE121, MFE3007, MFE3007A and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for DMS 90112B?

DMS 90112B is cataloged in the U.S. Government catalog under NSN 5961-00-163-3689. This indicates validated use in U.S. government and defense supply chains.

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